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Photonics on CMOS
4-févr.-2011 11:34 11:34
Il y a: 8 yrs


AUTEUR : PR. LUKAS W SNYMAN



Applications of 1 Gbps Silicon Avalanche LEDs for CMOS based optical communication, data processing and on-CMOS chip micro-photonic sensor systems.


Séminar By Prof. Lukas W Snyman
Department of Electrical Engineering,
Tshwane University of Technology (TUT), South Africa

Title: Applications of 1 Gbps Silicon Avalanche LEDs for CMOS based optical communication, data processing and on-CMOS chip micro-photonic sensor systems

Abstract: The utilization of Si Avalanche LEDs emitting at 0.75 micron
enable the development of all -Silicon CMOS based optical communication
systems without the incorporation of materials such as Ge or III-V
components. Advanced optical simulation software were used in order to
develop effective CMOS based waveguides, using CMOS materials
characteristics, processing parameters, and the spectral characteristics of
CMOS Av LEDs. The analyses show that both silicon nitride and Si oxinitride
offer good viability for developing such waveguides, utilizing 0.2 to
1.5 micron wide trench as well as CMOS over-layer based technology.
Effective single mode wave-guiding with calculated loss characteristics of
0.65 dB.cm-1 and with dispersion characteristics with a bandwidth-length
product of up to 100 GHz-cm is feasible. The technology can be utilised to
realize high speed waveguide based clock pulsing as well as high speed
interconnect data processing.
Advanced 3D CAD and optical simulation software were also used to
design a first iteration on-CMOS chip micro- photonic systems. Silicon
nitride waveguides are used as optical propagation channels, offering
losses of lower than 1dB.cm-1. Micro-bending and multi-planing of the
wave guiding is possible. Far field manipulation of the emitted channel
radiation is possible. The mature processing characteristics of CMOS
technology offers high integration possibilities. The emission levels of the
Si CMOS Av LEDs is 10+3 higher than the detectivity of silicon p-i-n
detectors, offering good dynamic range in detection and analyses. Sensing
can be performed by means of phase and intensity induced changes to the
evanescent field of the waveguides due to the adhesion of gases or
molecular structures. Diverse MOEMS applications are also possible.

 

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